Influence of Sb2 soaking on strained InAs0.8Sb0.2/Al0.2Ga0.8Sb multiple quantum well interfaces
InAsSb/AlGaSb systems have potential in mid-wavelength infrared detection and laser fields. Thus, their heteroepitaxial crystal quality and heterointerface are of great importance. Herein, the quantum well structure based on InAs0.8Sb0.2/Al0.2Ga0.8Sb was grown by interruption with and without Sb2 so...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/6.0000977 |