Low-Frequency Noise Behavior of AlGaN/GaN HEMTs with Different Al Compositions
Al<sub>x</sub>Ga<sub>1−x</sub>N/GaN heterostructures with two kinds of Al composition were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. The Al compositions in the AlGaN barrier layer were confirmed to be 13% and 28% using high resolution X-...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-09-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/10/9/830 |