Improved light extraction efficiency of GaN-based flip-chip light-emitting diodes with an antireflective interface layer

Improved light extraction efficiency of GaN-based flip-chip light-emitting diodes with an antireflective interface layer

GaN-based flip-chip light-emitting diodes (FC-LEDs) grown on nanopatterned sapphire substrates (NPSS) are fabricated using self-assembled SiO2 nanospheres as masks during inductively coupled plasma etching. By controlling the pattern spacing, epitaxial GaN can be grown from the top or bottom of patt...

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Bibliographic Details
Main Authors: Dongxue Wu, Ping Ma, Boting Liu, Shuo Zhang, Junxi Wang, Jinmin Li
Format: Article
Language:English
Published: AIP Publishing LLC 2016-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4948749

Internet

http://dx.doi.org/10.1063/1.4948749

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