Infinite Selectivity of Wet SiO<sub>2</sub> Etching in Respect to Al
We propose and demonstrate an unconventional method suitable for releasing microelectromechanical systems devices containing an Al layer by wet etching using SiO<sub>2</sub> as a sacrificial layer. We used 48% HF solution in combination with 20% oleum to keep the HF solution water-free a...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-03-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/11/4/365 |