Performance analysis of GaN-based micro light-emitting diodes by laser lift-off process

Performance analysis of GaN-based micro light-emitting diodes by laser lift-off process

In this study, a monochromatic GaN-based micro-light-emitting-diode (µLED) array was fabricated using flip-chip technology. The laser lift-off (LLO) process was employed to decrease the light divergence caused by the differing refractive indexes of sapphire (n = 1.77) and GaN (n = 2.4). The LLO-µLED...

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Bibliographic Details
Main Authors: Sheng-Hui Li, Chia-Ping Lin, Yen-Hsiang Fang, Wei-Hung Kuo, Ming-Hsien Wu, Chu-Li Chao, Ray-Hua Horng, Guo-Dung J. Su
Format: Article
Language:English
Published: KeAi Communications Co., Ltd. 2019-07-01
Series:Solid State Electronics Letters
Online Access:http://www.sciencedirect.com/science/article/pii/S2589208818300358

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http://www.sciencedirect.com/science/article/pii/S2589208818300358

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