On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs

On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs

The intentional doping of lateral GaN power high electron mobility transistors (HEMTs) with carbon (C) impurities is a common technique to reduce buffer conductivity and increase breakdown voltage. Due to the introduction of trap levels in the GaN bandgap, it is well known that these impurities give...

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Bibliographic Details
Main Authors: Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Giovanni Verzellesi
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Micromachines
Subjects:
GaN power HEMTs
breakdown voltage
current collapse
compensation ratio
auto-compensation
carbon doping
Online Access:https://www.mdpi.com/2072-666X/12/6/709

Internet

https://www.mdpi.com/2072-666X/12/6/709

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