Synergetics of the instability and randomness in formation of gradient modified semiconductor structures

The criteria for formation of an inhomogeneous structure based on vitreous Ge 2 S 3 with modifiers Al, Bi, Pb, Te that are identified due to changes in the condensed medium (evaporation temperature, condensation velocity, increasing or decreasing the intensity of the fluctuations of the active field...

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Bibliographic Details
Main Authors: N.V. Yurkovych, M.I. Mar'yan, V. Seben
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2018-12-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
Online Access:http://journal-spqeo.org.ua/n4_2018/P365-373abstr.html