Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation

Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation

The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As metamorphic high-electron-mobility transistor (M...

Full description

Bibliographic Details
Main Authors: Houng-Wei Chen, Tsung-Ying Lee, Jung-Sheng Huang, Kuan-Wei Lee, Yeong-Her Wang
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Isolation
metamorphic high-electron-mobility transistor (MHEMT)
oxidation
Online Access:https://ieeexplore.ieee.org/document/9335957/

Internet

https://ieeexplore.ieee.org/document/9335957/

Similar Items