A SIMPLE METHOD TO CALCULATE THE DISPLACEMENT DAMAGE CROSS SECTION OF SILICON CARBIDE

A SIMPLE METHOD TO CALCULATE THE DISPLACEMENT DAMAGE CROSS SECTION OF SILICON CARBIDE

We developed a simple method to prepare the displacement damage cross section of SiC using NJOY and SRIM/TRIM. The number of displacements per atom (DPA) dependent on primary knock-on atom (PKA) energy was computed using SRIM/TRIM and it is directly used by NJOY/HEATR to compute the neutron energy d...

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Bibliographic Details
Main Authors: JONGHWA CHANG, JIN-YOUNG CHO, CHOONG-SUP GIL, WON-JAE LEE
Format: Article
Language:English
Published: Elsevier 2014-08-01
Series:Nuclear Engineering and Technology
Subjects:
Displacement Per Atom (DPA)
Cross Section
Silicon Carbide
Compound Material
Online Access:http://www.sciencedirect.com/science/article/pii/S1738573315301157

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http://www.sciencedirect.com/science/article/pii/S1738573315301157

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