Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD
An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vap...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4879807 |