Investigation Influence of Channel Transport on Output Characteristics in Sub-100nm Heterojunction Tunnel FET

Investigation Influence of Channel Transport on Output Characteristics in Sub-100nm Heterojunction Tunnel FET

In this paper, the influences of channel transport on the output characteristic in sub-100nm heterojunction tunnel FET have been investigated through TCAD simulation. The calibrated tunneling and transport parameters with experiment have been adopted. The influences of the parameters characterizing...

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Bibliographic Details
Main Authors: Yunhe Guan, Haifeng Chen, Siwei Huang, Feng Liang
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Channel transport
heterojunction tunnel FET
mobility
quantum confinement
saturation velocity
Online Access:https://ieeexplore.ieee.org/document/9518369/

Internet

https://ieeexplore.ieee.org/document/9518369/

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