Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design
In this study, graphene-on-silicon process technology was developed to fabricate a power rectifier Schottky diode for efficiency improvement in high operating temperature. Trench-MOS-Barrier-Schottky (TMBS) diode structure was used to enhance the device performance. The main objective of this resear...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Penerbit Universiti Kebangsaan Malaysia,
2017-07.
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| Online Access: | Get fulltext |