Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 μC/cm2 due to small enlargement of hole diameter after pattern deve...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Penerbit Universiti Kebangsaan Malaysia,
2019-06.
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| Online Access: | Get fulltext |