Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3)

Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3)

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The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation...

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Bibliographic Details
Main Authors: Siti Kudnie Sahari (Author), Nik Amni Fathi Nik Zaini Fathi (Author), Azrul Azlan Hamzah (Author), Norsuzailina Mohamed Sutan (Author), Zaidi Embong (Author), Suhana Mohamed Sultan (Author), Muhammad Kashif (Author), Marini Sawawi (Author), Hasanah, Lilik (Author), Rohana Sapawi (Author), Kuryati Kipli (Author), Abdul Rahman Kram (Author), Nazreen Junaidi (Author)
Format: Article
Language:English
Published: Penerbit Universiti Kebangsaan Malaysia, 2019-06.
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