ICP-RIE dry etching using Cl2-based on GaN
In this study, the plasma characteristics and GaN etch properties of inductively coupled Cl2/Ar and Cl2/H2 plasmas were investigated. Our results showed that inductively coupled plasma (ICP) etching of gallium nitride by using Cl2/Ar and Cl2/H2 were possible to meet the requirements (anisotropy, hig...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Universiti Kebangsaan Malaysia,
2011-01.
|
| Online Access: | Get fulltext |