Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
The AlInN layers have been grown with different growth parameters on GaN/sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of growth parameters such as pressure and temperature on the Al incorporation during AlInN material growth have been investigated. The results...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universiti Kebangsaan Malaysia,
2013-02.
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| Online Access: | Get fulltext |