DLTS and C(t) transient study of defects induced by neutron radiation in MOS structures of CCD technology
The aim of this paper is to study neutron irradiation effects on PMOS capacitors and NMOSFETs transistors. The characterization of induced defects was made by capacitance transients C(t) measurements, DLTS spectroscopy, and optical DLTS (ODLTS). DLTS spectra present three peaks (1, 2, and 3) due to...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Faculty of Science, UTM,
2003-08.
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| Subjects: | |
| Online Access: | Get fulltext |