Prediction of n-AlGaAs/GaAs Schottky diode properties for milliwatt range application
The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device application without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the A1GaAs/GaAs HEMT Schottky diode is presented. The RF sign...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IDOSI Publications,
2010.
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| Subjects: | |
| Online Access: | Get fulltext |