Open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN HEMT structure
Sensing responses of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated in aqueous solution. In air-exposed ambient, the open-gate undoped AlGaN/GaN HEMT shows the only presence of linear region of currents while Si-do...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Asian Network for Scientific Information,
2010.
|
| Subjects: | |
| Online Access: | Get fulltext |