Impact of device parameter variation on the electrical characteristic of n-type junctionless nanowire transistor with high-k dielectrics
Metallurgical junction and thermal budget are serious constraints in scaling and performance of conventional metal-oxide-semiconductor field-effect transistor (MOSFET). To overcome this problem, junctionless nanowire fieldeffect transistor (JLNWFET) was introduced. In this paper, we investigate the...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Advanced Engineering and Science (IAES),
2020-06.
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| Subjects: | |
| Online Access: | Get fulltext |