FTIR spectroscopy characterization of Si-C bonding in SiC thin film prepared at room temperature by conventional 13.56Mhz RF PECVD
SiC thin film has been synthesized by using conventional 13.56MHz radio frequency plasma enhanced chemical vapour deposition (PECVD). The mixture of silane (SiH4) and methane (CH4) were used as precursor gases while hydrogen as carrier gas. The SiH4/CH4 ratio and the substrate temperature have been...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IbnuSina Institute,
2012.
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| Subjects: | |
| Online Access: | Get fulltext Get fulltext |