FTIR spectroscopy characterization of Si-C bonding in SiC thin film prepared at room temperature by conventional 13.56Mhz RF PECVD
SiC thin film has been synthesized by using conventional 13.56MHz radio frequency plasma enhanced chemical vapour deposition (PECVD). The mixture of silane (SiH4) and methane (CH4) were used as precursor gases while hydrogen as carrier gas. The SiH4/CH4 ratio and the substrate temperature have been...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IbnuSina Institute,
2012.
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| Subjects: | |
| Online Access: | Get fulltext Get fulltext |
| LEADER | 01682 am a22002413u 4500 | ||
|---|---|---|---|
| 001 | 29078 | ||
| 042 | |a dc | ||
| 100 | 1 | 0 | |a Omar, Muhammad Firdaus |e author |
| 700 | 1 | 0 | |a Ismail, Abd. Khamim |e author |
| 700 | 1 | 0 | |a Sumpono, Imam |e author |
| 700 | 1 | 0 | |a Albert Alim, Emilly |e author |
| 700 | 1 | 0 | |a Nawi, Mohd. Nazri |e author |
| 700 | 1 | 0 | |a Mukri, Mohd 'Azizir-Rahim |e author |
| 700 | 1 | 0 | |a Othaman, Zulkafli |e author |
| 700 | 1 | 0 | |a Sakrani, Samsudi |e author |
| 245 | 0 | 0 | |a FTIR spectroscopy characterization of Si-C bonding in SiC thin film prepared at room temperature by conventional 13.56Mhz RF PECVD |
| 260 | |b IbnuSina Institute, |c 2012. | ||
| 856 | |z Get fulltext |u http://eprints.utm.my/id/eprint/29078/1/AbdKhamimIsmail2012_FTIRSpectroscopyCharacterization.pdf | ||
| 856 | |z Get fulltext |u http://eprints.utm.my/id/eprint/29078/2/262 | ||
| 520 | |a SiC thin film has been synthesized by using conventional 13.56MHz radio frequency plasma enhanced chemical vapour deposition (PECVD). The mixture of silane (SiH4) and methane (CH4) were used as precursor gases while hydrogen as carrier gas. The SiH4/CH4 ratio and the substrate temperature have been varied in order to examine the reaction of the active species which can produce the Si-C bonding in the deposited film. FTIR spectroscopy was used to analyse the type of bonding and particularly to confirm the existence of Si-C bonding by comparing the spectrums obtained from deposited thin film samples and standard reference sample of bulk SiC single crystal wafer. The existence of Si-C bonding was confirmed and it was slightly shifted from the bulk SiC wafer at around 722cm-1 and 817cm-1. | ||
| 546 | |a en | ||
| 546 | |a en | ||
| 650 | 0 | 4 | |a QC Physics |