Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor
In recent development of nanoelectronic devices, strained silicon Metal- Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a promising structure for the future nanoscale device. Strained silicon is an attractive option due to the enhanced carrier mobility, high field veloci...
| Main Author: | |
|---|---|
| Format: | Thesis |
| Published: |
2013-02.
|
| Subjects: | |
| Online Access: | Get fulltext |