Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors
This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behave...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer New York LLC,
2014.
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| Subjects: | |
| Online Access: | Get fulltext |