Two-dimensional (2D) transition metal dichalcogenide semiconductor field-effect transistors: the interface trap density extraction and compact model
A surface potential-based low-field drain current compact model is presented for two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor field-effect transistors that takes into account the effect of interface trap states on device current-voltage (Ids-Vgs) characteristics and trans...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing Ltd.,
2015-07-01.
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| Subjects: | |
| Online Access: | Get fulltext |