Reduction of dislocation density of aluminium nitride buffer layer grown on sapphire substrate
An aluminium nitride (AlN) buffer layer with 200 nm thickness was grown on (0001) sapphire substrate using the metal-organic vapour phase epitaxy (MOVPE) method in a low-pressure furnace, followed by a clean-up treatment of sapphire substrate at 1100°C. Thereafter, the AlN buffer layer was annealed...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universiti Malaysia Pahang,
2016.
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| Subjects: | |
| Online Access: | Get fulltext |