Scattering-limited and ballistic transport in a nano-CMOS circuit
The mobility and saturation velocity in the nanoscale metal oxide semiconductor field effect transistor (MOSFET) are revealed to be ballistic; the former in a channel whose length is smaller than the scattering-limited mean free path. The drain-end carrier velocity is smaller than the ultimate satur...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier,
2008-07-25.
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| Subjects: | |
| Online Access: | Get fulltext |