Charge-based compact model of gate-all-around floating gate nanowire with variable oxide thickness for flash memory cell
Due to high gate electrostatic control and introduction of punch and plug process technology, the gate-all-around (GAA) transistor is very promising in, and apparently has been utilized for, flash memory applications. However, GAA Floating Gate (GAA-FG) memory cell still requires high programming vo...
| Main Author: | |
|---|---|
| Format: | Thesis |
| Published: |
2018.
|
| Subjects: | |
| Online Access: | Get fulltext |