Scaling and numerical simulation analysis of 50 nm MOSFET incorporating dielectric pocket (DP-MOSFET)
Characterization of a metal-oxide-semiconductor field effect transistor (MOSFET)incorporating dielectric pocket (DP) for suppression of short-channel effect (SCE) was demonstrated by using numerical simulation. The DP was incorporated between the channel and source/drain of planar MOSFET and was sca...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Malaysian Solid State Science and Technology Society,
2008.
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| Subjects: | |
| Online Access: | Get fulltext |