Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a-Si:H

Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a-Si:H

Strain in a material induces shifts in vibrational frequencies. This phenomenon is a probe of the nature of the vibrations and interatomic potentials and can be used to map local stress/strain distributions via Raman microscopy. This method is standard for crystalline silicon devices, but due to the...

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Bibliographic Details
Main Authors: Johlin, Eric C. (Author), Kirkpatrick, Timothy R. (Contributor), Buonassisi, Tonio (Contributor), Grossman, Jeffrey C. (Author), Strubbe, David (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor), Johlin, Eric Carl (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2016-01-07T01:28:39Z.
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