Using gate-modulated Raman scattering and electron-phonon interactions to probe single-layer graphene: A different approach to assign phonon combination modes

Using gate-modulated Raman scattering and electron-phonon interactions to probe single-layer graphene: A different approach to assign phonon combination modes

Gate-modulated and laser-dependent Raman spectroscopy have been widely used to study q = 0 zone center phonon modes, their self-energy, and their coupling to electrons in graphene systems. In this work we use gate-modulated Raman of q ≠ 0 phonons as a technique to understand the nature of five seco...

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Bibliographic Details
Main Authors: Sato, K. (Author), Saito, R. (Author), Araujo, P. T. (Contributor), Mafra, Daniela Lopes (Contributor), Kong, Jing (Contributor), Dresselhaus, Mildred (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2016-01-11T01:53:29Z.
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