AlN-AlN Layer Bonding and Its Thermal Characteristics
Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face direct dielectric bonding of clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially ox...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Electrochemical Society,
2016-03-28T16:18:27Z.
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| Subjects: | |
| Online Access: | Get fulltext |