Defect and temperature dependence of tunneling in InAs/GaSb heterojunctions
We assess the origin of the reported temperature dependence of subthreshold slope in many published tunnel field effect transistors (TFETs) by examining the temperature dependence of the intrinsic tunneling at InAs/GaSb interfaces in the absence of three-terminal parasitics. We compare the temperatu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics (AIP),
2016-03-28T18:02:14Z.
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| Subjects: | |
| Online Access: | Get fulltext |