Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient
A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a "three-step growth" approach in a reduc...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics (AIP),
2016-05-23T01:29:33Z.
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| Subjects: | |
| Online Access: | Get fulltext |