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03361 am a22006973u 4500 |
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104870 |
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|a dc
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|a Lee, Yi-Hsien
|e author
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|a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
|e contributor
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|a Massachusetts Institute of Technology. Department of Materials Science and Engineering
|e contributor
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|a Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
|e contributor
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|a Massachusetts Institute of Technology. Department of Physics
|e contributor
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|a Massachusetts Institute of Technology. Research Laboratory of Electronics
|e contributor
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|a Ling, Xi
|e contributor
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|a Lin, Yuxuan
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|a Ma, Qiong
|e contributor
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|a Wang, Ziqiang
|e contributor
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|a Song, Yi
|e contributor
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|a Yu, Lili
|e contributor
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|a Huang, Shengxi
|e contributor
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|a Fang, Wenjing
|e contributor
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|a Zhang, Xu
|e contributor
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|a Hsu, Allen Long
|e contributor
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|a Bie, Yaqing
|e contributor
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|a Li, Ju
|e contributor
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|a Jarillo-Herrero, Pablo
|e contributor
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|a Dresselhaus, Mildred
|e contributor
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|a Palacios, Tomas
|e contributor
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|a Kong, Jing
|e contributor
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|a Zhu, Yimei
|e author
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|a Wu, Lijun
|e author
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|a Ling, Xi
|e author
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|a Lin, Yuxuan
|e author
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|a Ma, Qiong
|e author
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|a Wang, Ziqiang
|e author
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|a Song, Yi
|e author
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|a Yu, Lili
|e author
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| 700 |
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|a Huang, Shengxi
|e author
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| 700 |
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|a Fang, Wenjing
|e author
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| 700 |
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|a Zhang, Xu
|e author
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| 700 |
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|a Hsu, Allen Long
|e author
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| 700 |
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|a Bie, Yaqing
|e author
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| 700 |
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|a Li, Ju
|e author
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| 700 |
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|a Jarillo-Herrero, Pablo
|e author
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| 700 |
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|a Dresselhaus, Mildred
|e author
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| 700 |
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|a Palacios, Tomas
|e author
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| 700 |
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|a Kong, Jing
|e author
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|a Parallel Stitching of Two-Dimensional Materials
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|a Parallel Stitching of 2D Materials
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| 260 |
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|b John Wiley & Sons,
|c 2016-10-19T20:47:38Z.
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| 856 |
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|z Get fulltext
|u http://hdl.handle.net/1721.1/104870
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|a Diverse parallel stitched 2D heterostructures, including metal-semiconductor, semiconductor-semiconductor, and insulator-semiconductor, are synthesized directly through selective "sowing" of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method. The methodology enables the large-scale fabrication of lateral heterostructures, which offers tremendous potential for its application in integrated circuits.
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|a Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies (Award No. 023674)
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|a National Science Foundation (U.S.). Division of Materials Research. (Award No. 1004147)
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| 520 |
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|a United States. Department of Energy. (Award No. DE-SC0001299)
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| 520 |
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|a United States. Office of Naval Research. Presidential Early Career Award for Scientists and Engineers (Award No. 021302-001)
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| 520 |
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|a United States. Department of Energy. (Contract No. DE-AC02-98CH10886)
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| 520 |
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|a China. Ministry of Science and Technology. (MOST 103-2112-M-007-001-MY3)
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| 546 |
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|a en_US
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| 655 |
7 |
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|a Article
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| 773 |
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|t Advanced Materials
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