Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are ab...

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Main Authors: Fei, Ruixiang (Author), Li, Wenbin (Contributor), Li, Ju (Contributor), Yang, Li (Author)
Other Authors: Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2016-11-03T20:49:32Z.
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