Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS
We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are ab...
Main Authors: | Fei, Ruixiang (Author), Li, Wenbin (Contributor), Li, Ju (Contributor), Yang, Li (Author) |
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Other Authors: | Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor) |
Format: | Article |
Language: | English |
Published: |
American Institute of Physics (AIP),
2016-11-03T20:49:32Z.
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Subjects: | |
Online Access: | Get fulltext |
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