Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

In the original article we presented results that show that the strain in germanium (Ge) epitaxial films grown directly on a silicon (Si) (001) with 6° offcut has a tensile strain of 0.6%. This strain value is much higher than the typical tensile strain value of 0.2% reported for Ge/Si. This discrep...

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Bibliographic Details
Main Authors: Tan, Yew Heng (Author), Lee, Kwang Hong (Contributor), Jandl, Adam Christopher (Contributor), Fitzgerald, Eugene A (Contributor), Tan, Chuan Seng (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Singapore-MIT Alliance in Research and Technology (SMART) (Contributor)
Format: Article
Language:English
Published: Springer US, 2016-12-16T19:10:05Z.
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