Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes

Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes

We use electronic transport and atom-probe tomography to study ZnO∶Al/SiO[subscript 2]/Si Schottky diodes on lightly doped n- and p-type Si. We vary the carrier concentration in the ZnO∶Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography...

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Bibliographic Details
Main Authors: Schoofs, Frank (Author), Ramanathan, Shriram (Author), Jaramillo, Rafael (Contributor), Youssef, Amanda (Contributor), Akey, Austin J (Contributor), Buonassisi, Anthony (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2016-12-27T15:38:05Z.
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