High-Performance WSe 2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

• Main Authors: Santos, Elton J. G. (Author), Yu, Lili (Contributor), Zubair, Ahmad (Contributor), Zhang, Xu (Contributor), Lin, Yuxuan (Contributor), Zhang, Yuhao (Contributor), Palacios, Tomas (Contributor)
• Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
• Format: Article
• Language: English
• Published: American Chemical Society (ACS), 2017-04-25T13:45:59Z.
• Subjects: Article
• Online Access: Get fulltext

 Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe₂ CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.