Resistive Switching Mechanisms on TaO[subscript x] and SrRuO[subscript 3] Thin-Film Surfaces Probed by Scanning Tunneling Microscopy

Resistive Switching Mechanisms on TaO[subscript x] and SrRuO[subscript 3] Thin-Film Surfaces Probed by Scanning Tunneling Microscopy

The local electronic properties of tantalum oxide (TaO[subscript x], 2 ≤ x ≤ 2.5) and strontium ruthenate (SrRuO[subscript 3]) thin-film surfaces were studied under the influence of electric fields induced by a scanning tunneling microscope (STM) tip. The switching between different redox states in...

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Main Authors: Moors, Marco (Author), Wedig, Anja (Author), Bäumer, Christoph (Author), Skaja, Katharina (Author), Arndt, Benedikt (Author), Dittmann, Regina (Author), Waser, Rainer (Author), Valov, Ilia (Author), Adepalli, Kiran Kumar (Contributor), Lu, Qiyang (Contributor), Tuller, Harry L (Contributor), Yildiz, Bilge (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor)
Format: Article
Language:English
Published: American Chemical Society (ACS), 2017-05-04T14:26:52Z.
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