Carrier leakage into the continuum in diagonal GaAs/Al
The maximum operating temperature reported so far for THz-QCLs is ∼200 K. With the well-known degradation mechanism of thermally activated LO-phonon scattering, one straightforward strategy to improve their temperature performances is the use of diagonal structures in which the upper-to-lower state...
| Main Authors: | , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics (AIP),
2017-05-23T13:36:05Z.
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| Subjects: | |
| Online Access: | Get fulltext |