Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared response in silicon largely centred on combining the modification of its electronic structure via controlled defect formation...

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Bibliographic Details
Main Authors: Hutchinson, David (Author), Mathews, Jay (Author), Sullivan, Joseph T. (Author), Recht, Daniel (Author), Williams, James S. (Author), Warrender, Jeffrey M. (Author), Persans, Peter D. (Author), Aziz, Michael J. (Author), Mailoa, Jonathan P (Contributor), Akey, Austin J (Contributor), Simmons, Christine B (Contributor), Sullivan, Joseph Timothy (Contributor), Winkler, Mark Thomas (Contributor), Buonassisi, Anthony (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
Format: Article
Language:English
Published: Nature Publishing Group, 2017-06-21T14:00:47Z.
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