Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has l...

Full description

Bibliographic Details
Main Authors: Ooi, K. J. A. (Author), Ng, D. K. T. (Author), Wang, T. (Author), Chee, A. K. L. (Author), Ng, S. K. (Author), Wang, Q. (Author), Ang, L. K. (Author), Tan, D. T. H. (Author), Agarwal, Anuradha (Contributor), Kimerling, Lionel C (Contributor)
Other Authors: Massachusetts Institute of Technology. Materials Processing Center (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microphotonics Center (Contributor)
Format: Article
Language:English
Published: Nature Publishing Group, 2017-06-21T17:54:15Z.
Subjects:
Article
Online Access:Get fulltext

Internet

Get fulltext

Similar Items