Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate with 6° off-cut using a heavily arsenic (As) doped Ge seed layer. The growth steps consists of (i) growth of a heavily As-doped Ge seed layer at low temperature (LT, at 400°C), (ii) Ge growth with As gradually re...

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Bibliographic Details
Main Authors: Lee, Kwang Hong (Author), Bao, Shuyu (Author), Wang, Bing (Author), Wang, Cong (Author), Yoon, Soon Fatt (Author), Tan, Chuan Seng (Author), Michel, Jurgen (Contributor), Fitzgerald, Eugene A (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: AIP Publishing, 2017-10-10T20:40:40Z.
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