Atomic Structure and Dynamics of Defects in 2D MoS

Atomic Structure and Dynamics of Defects in 2D MoS

We present a detailed atomic-level study of defects in bilayer MoS[subscript 2] using aberration-corrected transmission electron microscopy at an 80 kV accelerating voltage. Sulfur vacancies are found in both the top and bottom layers in 2H- and 3R-stacked MoS[subscript 2] bilayers. In 3R-stacked bi...

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Bibliographic Details
Main Authors: Zhou, Si (Author), Wang, Shanshan (Author), Li, Huashan (Contributor), Xu, Wenshuo (Author), Gong, Chuncheng (Author), Grossman, Jeffrey C. (Contributor), Warner, Jamie H. (Author)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: American Chemical Society (ACS), 2017-10-11T12:43:53Z.
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