Growth of InGaAs-channel transistor layers on large-scale Si wafers for HeteroIntegration with Si CMOS

We report on the growth of In 0.30 Ga 0.70 As channel high-electron mobility transistor (HEMT) epi-layers on a 200 mm silicon wafer by metal organic chemical vapor deposition (MOCVD). The device epi-layers were grown on a silicon substrate by using a ∼ 3 μm thick buffer comprising a Ge layer, a GaAs...

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Bibliographic Details
Main Authors: Nguyen, X.S (Author), Yadav, S. (Author), Lee, K.H (Author), Kohen, D. (Author), Kumar, A. (Author), Made, R.I (Author), Gong, X. (Author), Lee, K.E (Author), Tan, C.S (Author), Yoon, S.F (Author), Chua, S.J (Author), Fitzgerald, Eugene A (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: CS Mantech, 2017-10-11T13:31:01Z.
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