Growth of InGaAs-channel transistor layers on large-scale Si wafers for HeteroIntegration with Si CMOS
We report on the growth of In 0.30 Ga 0.70 As channel high-electron mobility transistor (HEMT) epi-layers on a 200 mm silicon wafer by metal organic chemical vapor deposition (MOCVD). The device epi-layers were grown on a silicon substrate by using a ∼ 3 μm thick buffer comprising a Ge layer, a GaAs...
Main Authors: | , , , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
CS Mantech,
2017-10-11T13:31:01Z.
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Subjects: | |
Online Access: | Get fulltext |