Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs

Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs

We provide a detailed study of the oxide- semiconductor interface trap assisted tunneling (TAT) mechanism in tunnel FETs to show how it contributes a major leakage current path before the band-to-band tunneling (BTBT) is initiated. With a modified Shockley-Read-Hall formalism, we show that at room t...

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Bibliographic Details
Main Authors: Sajjad, Redwan Noor (Contributor), Chern, Winston (Contributor), Hoyt, Judy L (Contributor), Antoniadis, Dimitri A (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2018-04-23T20:13:33Z.
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