Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs
We provide a detailed study of the oxide- semiconductor interface trap assisted tunneling (TAT) mechanism in tunnel FETs to show how it contributes a major leakage current path before the band-to-band tunneling (BTBT) is initiated. With a modified Shockley-Read-Hall formalism, we show that at room t...
Main Authors: | , , , |
---|---|
Other Authors: | , |
Format: | Article |
Language: | English |
Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2018-04-23T20:13:33Z.
|
Subjects: | |
Online Access: | Get fulltext |