Accessible Switching of Electronic Defect Type in SrTiO₃ via Biaxial Strain

Accessible Switching of Electronic Defect Type in SrTiO₃ via Biaxial Strain

Elastic strain is used widely to alter the mobility of free electronic carriers in semiconductors, but a predictive relationship between elastic lattice strain and the extent of charge localization of electronic defects is still underdeveloped. Here we considered SrTiO₃, a prototypical perovskite as...

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Main Authors: Chi, Yen-Ting (Contributor), Youssef, Mostafa Youssef Mahmoud (Contributor), Sun, Lixin (Contributor), Van Vliet, Krystyn J (Contributor), Yildiz, Bilge (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Laboratory for Nuclear Science (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2018-05-30T19:12:33Z.
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